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AssigneeWisconsin Alumni Research Foundation
InventorsDan Botez, Dapeng P. Xu, Luke J. Mawst
Estimating the term…
An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The reflector reflects electrons at the higher energy level at which they were injected and transmits electrons from the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the multistage structure to provide conduction across the device and to provide optical confinement of the photons emitted.
A semiconductor structure comprising a multiple semiconductor layer structure including an electron injector and an active region coupled to the electron injector, the active region comprising:
A semiconductor structure comprising a multiple semiconductor layer structure including an electron injector and an active region coupled to the electron injector, wherein:
A buried heterostructure semiconductor laser comprising:
A semiconductor laser comprising an active region comprising at least one quantum well having associated therewith an upper energy level and a lower energy level, characterized in that electrons in the upper energy level of the active region undergo a radiative transition to emit a photon as they decay from the upper energy level to the lower energy level, wherein the active region comprises a composite exit barrier layer consisting of a layer of indirect bandgap semiconductor and a layer of direct bandgap semiconductor adjacent to the layer of indirect bandgap semiconductor.
Dependencies are inferred from the claim text.