Semiconductor laser device and semiconductor laser device array

The semiconductor laser device according to claim 1, wherein the optical path portion is disposed between the light emitting surface and one end of the main waveguide.

The semiconductor laser device according to claim 1, wherein at least a portion of the optical path portion is a gain type waveguide formed in the active layer.

The semiconductor laser device according to claim 1, wherein the optical path portion has a pair of side surfaces, disposed between the light emitting surface and one end of the main waveguide and forming a refractive index type waveguide, and

• of the pair of side surfaces of the main waveguide, the side surface at the side, at which an extension line to the light emitting surface and the light emitting surface form an acute angle at an inner side of the main waveguide, forms, with the optical path portion side surface, positioned at the same side as the main waveguide side surface, an angle less than 180°−θ at an outer side of the main waveguide and the optical path portion.

The semiconductor laser device according to claim 1, wherein the optical path portion has a pair of side surfaces, disposed between the light reflecting surface and the other end of the main waveguide and forming a refractive index type waveguide, and

• of the pair of side surfaces of the main waveguide, the side surface at the side, at which an extension line to the light reflecting surface and the light reflecting surface form an acute angle at an inner side of the main waveguide, forms, with the optical path portion side surface, positioned at the same side as the main waveguide side surface, an angle less than 180°−θ at an outer side of the main waveguide and the optical path portion.

The semiconductor laser device according to claim 1, wherein the length of the main waveguide and the mutual interval between the pair of side surfaces of the main waveguide are set so that light that resonates between the light emitting surface and the light reflecting surface in the main waveguide is reflected the same number of times at each of the pair of side surfaces of the main waveguide.

The semiconductor laser device according to claim 1, wherein the relative angle θ of the side surfaces of the main waveguide with respect to the light emitting surface and the light reflecting surface is in a range of θc≦θ≦θc+1°.

The semiconductor laser device according to claim 1, wherein the relative angle θ of the side surfaces of the main waveguide with respect to the light emitting surface and the light reflecting surface is substantially matched to the total reflection critical angle θc at the side surfaces of the main waveguide.

A semiconductor laser device array comprising:

• a plurality of the semiconductor laser devices according to claim 1, wherein
• the plurality of semiconductor laser devices are formed integrally upon being positioned in a direction that intersects the predetermined axial direction.