US 2009/0022193 A1 · NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Abstract

An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 10; a semiconductor multilayer structure 100 formed on a principal face of the n-GaN substrate 10, the semiconductor multilayer structure 100 including a p-type region and an n-type region; a p-side electrode 32 which is in contact with a portion of the p-type region included in the semiconductor multilayer structure 100; and an n-side electrode 34 provided on the rear face of the n-GaN substrate 10. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrode 34 is adjusted to 5 atom % or less.

Claims13

Dependent claims

A nitride semiconductor device comprising:

a nitride-type semiconductor substrate containing an n-type impurity;
a semiconductor multilayer structure formed on a principal face of the semiconductor substrate, the semiconductor multilayer structure including a p-type region and an n-type region;
a p-side electrode which is in contact with a portion of the p-type region included in the semiconductor multilayer structure;
and
an n-side electrode provided on a rear face of the semiconductor substrate,
wherein the rear face of the semiconductor substrate includes a nitrogen surface, with a carbon concentration or 5 atom % or less at an interface between the rear face of the semiconductor substrate and the n-side electrode.

3 more elements

Dependencies are inferred from the claim text.

Nitride semiconductor device and method for manufacturing same

Life of this patent

Nitride semiconductor device and method for manufacturing same

Life of this patent

Abstract

Claims13