Nonvolatile memory device and method of operating fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKi-ha Hong, Sung-hoon Lee, Jae-woong Hyun, Jai-kwang Shin, Young-gu Jin, Sung-il Park, Jong-seob Kim
Life of this patent
Estimating the term…
Abstract
Provided is a method of reliably operating a highly integratable nonvolatile memory device. The nonvolatile memory device may include a string selection transistor, a plurality of memory transistors, and a ground selection transistor between a bit line and a common source line. In the nonvolatile memory device, data may be erased from the memory transistors by applying an erasing voltage to the bit line or the common source line.
Claims22
A method of operating a nonvolatile memory device comprising:
- erasing data from a plurality of memory transistors by applying an erasing voltage to at least one of a bit line and a common source line, with the plurality of memory transistors being between the bit line and the common source line.
A method of operating a nonvolatile memory device comprising:
- simultaneously erasing data from a NAND cell array by applying an erasing voltage to a plurality of bit lines or a common source line between the NAND cell array.
A nonvolatile memory device comprising:
- a plurality of memory transistors;
- a bit line;
- and
- a common source line, the plurality of memory transistors being between the bit line and the common source line, with an erasing voltage being applied to at least one of the bit line and the common source line to erase data from the plurality of memory transistors.
Dependencies are inferred from the claim text.