Operating method of non-volatile memory device

An operating method for a non-volatile memory device, applicable on a non-volatile memory device comprising a substrate comprising a trench therein, a first conductive type first well region disposed in the substrate, a second conductive type second well region disposed above the first conductive type first well region, wherein a junction of the first conductive type first well region and the second conductive type second well region is higher than a bottom of the trench, a control gate disposed at a sidewall of the trench, a charge storage layer disposed between the control gate and the substrate, a source region disposed in the substrate at a bottom of the trench beside the control gate, a drain region disposed in the second conductive type second well region beside another side of the control gate, wherein the drain region and the second conductive type second well region are electrically shorted, the operating method comprising:

• applying a first voltage to the control gate, a second voltage to the drain region, a third voltage to the source region and using channel F-N tunneling effect to program the memory cell.