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US 2009/0021981 A1Published application
Nonvolatile memory device including circuit formed of thin film transistors
AssigneeRenesas Technology Corp.
InventorsTaku OGURA, Tadaaki Yamauchi, Takashi Kubo
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Abstract
A transistor is arranged for electrically isolating a sense amplifier formed of a thin film transistor from a data line electrically coupled to the sense amplifier. When a write driver drives the data line, a control signal is applied to isolate the data line from the sense amplifier.
Claims4
1-8. (canceled)
A nonvolatile memory device comprising:
- a memory array having a plurality of memory cells arranged in rows and columns;
- a data line transmitting write data and read data for said memory array;
- a column decoder executing a column select operation in said memory array, in response to an address instruction from an outside;
- a column select gate electrically coupling a selected memory cell in said memory array, to said data line;
- and
- a gate driver driving said column select gate in response to an instruction from said column decoder, wherein
- said gate driver drives said column select gate by using as an operation voltage a predetermined voltage not more than a boosted voltage applied to the selected memory cell in a read operation, in response to an instruction from said column decoder in said read operation.
4 more elements
Dependencies are inferred from the claim text.