Non-volatile memory and operating method thereof
AssigneeMacronix International Co., Ltd.
InventorsChun-Jen Huang, Chia-Jung Chen, Hsin-Yi Ho
Life of this patent
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Abstract
A non-volatile memory and an operating method thereof. The non-volatile memory includes a memory cell array, a first dummy cell array, an address decoding unit and a synchronous programming circuit. The memory cell array includes a first memory cell, and the first dummy cell array includes a first dummy cell. The first dummy cell is adjacent to a first side of a memory cell array and corresponds to the first memory cell. The address decoding unit receives an address signal for decoding. When the address signal is a relative address of the first dummy cell, the synchronous programming circuit controls the first dummy cell and the first memory cell to be synchronously programmed.
Claims19
A non-volatile memory, comprising:
- a memory cell array, which comprises a first memory cell;
- a first dummy cell array comprising a first dummy cell, which is adjacent to a first side of the memory cell array and corresponds to the first memory cell;
- an address decoding unit for receiving an address signal for decoding;
- and
- a synchronous programming circuit for controlling the first dummy cell and the first memory cell to be synchronously programmed when the address signal is a relative address of the first dummy cell.
An operating method of a non-volatile memory, the non-volatile memory comprising a memory cell array and a first dummy cell array, the memory cell array comprising a first memory cell, the first dummy cell array comprising a first dummy cell, which is adjacent to a first side of the memory cell array and corresponds to the first memory cell, the operating method comprising the steps of:
- (a) receiving an address signal for decoding;
- and
- (b) synchronously programming the first dummy cell and the first memory cell when the address signal is a relative address of the first dummy cell.
Dependencies are inferred from the claim text.