Insulator film, capacitor element, dram and semiconductor device
AssigneeElpida Memory, Inc.
InventorMasami Tanioku
Life of this patent
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Abstract
The insulator film of the present invention is suited for use as the insulator material of capacitor elements composing DRAM, is used as the insulator layer of a capacitor element provided with an insulator layer that is interposed between an upper electrode and a lower electrode, and is composed of titanium dioxide to which at least one element from among the lanthanoid elements, Hf and Y is added.
Claims10
An insulator film used as an insulator layer interposed between two electrodes in a capacitor element, the insulator film comprising titanium dioxide to which at least one element from among the lanthanoid elements, Hf and Y is added.
An insulator film interposed between opposing electrodes of a capacitor element, the insulator film comprising titanium and at least one element from among the lanthanoid elements, Hf and Y, and having a band gap width of 3 eV or higher in terms of energy level.
A capacitor element comprising:
- two electrodes, and
- an insulator layer interposed between said two electrodes, and comprising titanium dioxide containing at least one element from among the lanthanoid elements, Hf and Y.
A capacitor element comprising:
- two electrodes, and
- an insulator layer interposed between said two electrodes, and comprising titanium and at least one element from among the lanthanoid elements, Hf and Y and having a band gap width of 3 eV or higher in terms of energy level.
A DRAM comprising:
- a memory cell unit provided with a capacitor element including two electrodes, and an insulator layer interposed between said two electrodes and comprising titanium dioxide containing at least one element from among the lanthanoid elements, Hf and Y;
- and
- a peripheral circuit disposed around said memory cell unit.
A DRAM comprising:
- a memory cell unit provided with a capacitor element including two electrodes, and an insulator layer interposed between said two electrodes and comprising titanium and at least one element from among the lanthanoid elements, Hf and Y and having a band gap width of 3 eV or higher in terms of energy level;
- and
- a peripheral circuit disposed around said memory cell unit.
A semiconductor device provided with a capacitor element including two electrodes, and an insulator layer interposed between said two electrodes and comprising titanium dioxide containing at least one element from among the lanthanoid elements, Hf and Y.
A semiconductor device provided with a capacitor element including two electrodes, and an insulator layer interposed between said two electrodes and comprising titanium and at least one element from among the lanthanoid elements, Hf and Y and having a band gap width of 3 eV or higher in terms of energy level.
Dependencies are inferred from the claim text.