Capacitor, method of manufacturing a capacitor and method of manufacturing a semiconductor device
OwnerDong Jin Junginventor
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OwnerDong Jin Junginventor
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A capacitor includes a lower electrode structure which includes a sidewall, an upper surface and a rounded surface between the sidewall and the upper surface. The capacitor further includes a ferroelectric layer pattern disposed on the lower electrode structure, and an upper electrode structure is provided on the ferroelectric layer pattern. The ferroelectric layer pattern is formed on the upper surface, the sidewall and the rounded surface of the lower electrode structure. The effective area between the lower electrode structure and the ferroelectric layer pattern may be increased, and the crystalline structure of the ferroelectric layer pattern may be improved. Accordingly, the capacitor may provide enhanced capacitance and electrical characteristics.
A capacitor comprising:
A method of manufacturing a capacitor, comprising:
A method of manufacturing a semiconductor device, comprising:
Dependencies are inferred from the claim text.