Amplification type solid-state imaging device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMakoto Inagaki, Kazuaki Igaki, Motohiro Kojima
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Abstract
A plurality of pixels, each including a second conductivity-type photodiode portion 1 formed in a first conductivity-type well region and an amplifier transistor 6 for amplifying and outputting charge accumulated in the photodiode portion, are arrayed two-dimensionally. Furthermore, an intra-pixel contact 2 for providing the well region with a reference voltage is provided in the photodiode portion. With this configuration, it is possible to achieve a rational intra-pixel GND contact arrangement with which the afterimage characteristics are improved and the optical characteristics are not affected adversely.
Claims5
An amplification type solid-state imaging device in which a plurality of pixels are arrayed two-dimensionally, each of the pixels including:
- a second conductivity-type photodiode portion formed in a first conductivity-type well region;
- and an amplifier transistor for amplifying and outputting charge accumulated in the photodiode portion,
- wherein an intra-pixel contact for providing the well region with a reference voltage is provided in the photodiode portion.
Dependencies are inferred from the claim text.