Electrical fuse having a cavity thereupon

A semiconductor structure comprising:

• an electrical fuse comprising a first electrode, a second electrode, and a fuselink, and located on shallow trench isolation in a semiconductor substrate, wherein each of said first electrode, said second electrode, and said fuselink comprises a conductive material;
• at least one cavity located in proximity to said electrical fuse and above said shallow trench isolation;
• and
• a dielectric layer encapsulating said at least one cavity and vertically abutting said shallow trench isolation.

A method of forming a semiconductor structure comprising:

• forming an electrical fuse comprising a first electrode, a second electrode, and a fuselink on shallow trench isolation in a semiconductor substrate;
• forming a first dielectric layer on said electrical fuse;
• forming at least one opening in said first dielectric layer by etching said first dielectric layer and exposing at least one of a top surface of said electrical fuse and a top surface of said shallow trench isolation around said electrical fuse;
• and
• depositing a second dielectric layer and forming at least one cavity within said first dielectric layer, wherein said second dielectric layer extends into and encapsulates said at least one cavity.