Driving device of voltage drive type semiconductor device
AssigneeToyota Jidosha Kabushiki Kaisha
InventorsHidetoshi Morishita, Hideo Yamawaki, Yuu Suzuki
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AssigneeToyota Jidosha Kabushiki Kaisha
InventorsHidetoshi Morishita, Hideo Yamawaki, Yuu Suzuki
Estimating the term…
A driving device 10 of an IGBT 1 comprises a high potential side switch device group having a plurality of switch devices M1 and M1′, one of ends of each switch device being connected to a high potential side; a low potential side switch device group having a plurality of switch devices M2 and M2′, one of ends of each switch device being connected to a low potential side; an drive type selective input terminal 10b to which a drive type selection signal corresponding to drive type of the IGBT 1 connected to the driving device 10 is inputted; a direct drive type control unit 23 and an indirect drive type control unit 24 generating a control signal controlling complementarily the high potential side switch device group and the low potential side switch device group corresponding to the drive type of the IGBT 1; and a selector 25 selecting the control signal controlling the high potential side switch device group and the low potential side switch device group corresponding to an inputted drive type selection signal.
A driving device of a voltage drive type semiconductor device comprising:
Dependencies are inferred from the claim text.