Method and test system for determining gate-to-body current in a floating body FET

A method for determining a gate-to-body current for a floating body FET, said method comprising the steps of:

• measuring a respective gate-to-body current (IgbT) for at least three unique body-tied FET structures;
• determining at least three current flow relationships by expressing said respective gate-to-body current as a sum of a first gate-to-body current density component multiplied by a first gate area, a second gate-to-body current density component multiplied by a second gate area, and a third gate-to-body current density component multiplied by a third gate area;
• determining a floating body gate-to-body current density (JgbF) by utilizing said at least three current flow relationships, and utilizing said floating body gate-to-body current density to determine said a gate-to-body current for said floating body FET.

A test system comprising automated test equipment coupled to a wafer under test, said wafer under test comprising at least three unique body-tied FET structures, said automated test equipment determining a gate-to-body current for a floating body FET by using a method comprising steps of:

• measuring at least three unique gate-to-body currents corresponding to said at least three unique body-tied FET structures;
• determining at least three unique relationships between said at least three unique gate-to-body currents and at least three gate-to-body current density components for said at least three unique body-tied FET structures;
• utilizing said at least three unique relationships to determine said gate-to-body current for said floating body FET.