Semiconductor device and method for fabricating semiconductor device
OwnerKayo Nomura, Junichi Wada +2inventors
InventorsKayo Nomura, Junichi Wada, Hideto Matsuyama, Masayuki Kitamura
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Abstract
A semiconductor device includes a first contact plug arranged above a semiconductor substrate and using aluminum (Al) as a material; a second contact plug arranged on and in contact with the first contact plug and using a refractory metal material; a first dielectric film arranged on a flank side of the first and second contact plugs; a wire arranged above the second contact plug and using copper (Cu) as a material; a second dielectric film arranged on a flank side of the wire; and a barrier film arranged at least between the wire and the first dielectric film and between the wire and the second dielectric film.
Claims20
A semiconductor device, comprising:
- a first contact plug arranged above a semiconductor substrate and using aluminum (Al) as a material;
- a second contact plug arranged on and in contact with the first contact plug and using a refractory metal material;
- a first dielectric film arranged on a flank side of the first and second contact plugs;
- a wire arranged above the second contact plug and using copper (Cu) as a material;
- a second dielectric film arranged on a flank side of the wire;
- and
- a barrier film arranged at least between the wire and the first dielectric film and between the wire and the second dielectric film.
A method for fabricating a semiconductor device, comprising:
- forming a first dielectric film above a semiconductor substrate;
- forming a first opening in the first dielectric film;
- causing an aluminum (Al) film to deposit so that the first opening is filled up;
- etching an upper part of the Al film filled up in the first opening;
- causing a refractory metal material film to deposit inside the first opening formed by the upper part of the Al film being etched;
- and
- forming a wire using copper (Cu) as a material above the refractory metal material film.
A method for fabricating a semiconductor device, comprising:
- forming a first dielectric film above a semiconductor substrate;
- forming a first opening in the first dielectric film;
- causing an aluminum (Al) film to deposit so that the first opening is filled up;
- etching an upper part of the Al film filled up in the first opening;
- causing a refractory metal material film to deposit inside the first opening formed by the upper part of the Al film being etched;
- forming a second dielectric film above the first dielectric film and the refractory metal material film;
- forming a second opening reaching the refractory metal material film in the second dielectric film;
- forming a seed film using copper (Cu) containing manganese (Mn) as a material inside the second opening;
- filling the second opening with Cu using the seed film as a cathode electrode;
- and
- forming a barrier film containing Mn, silicon (Si), and oxygen (O) from the seed film.
Dependencies are inferred from the claim text.