Semiconductor Device and Manufacturing Method Thereof
AssigneeDongbu Electronics Co., Ltd.
InventorMin Dae Hong
Life of this patent
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Abstract
A semiconductor device is provided. The semiconductor device includes a substrate in which a first interlayer insulation layer having a first via hole and a first trench is formed. The semiconductor device also includes a first via plug and a first metal line respectively formed by filling the first via hole and the first trench with a first metal, a predetermined scratch being formed on the first metal line; and a second via plug a second metal line respectively formed by filling a second via hole and a second trench with a second metal, the second metal lines being separated.
Claims6
A semiconductor device comprising:
- a substrate in which a first interlayer insulation layer having a first via hole and a first trench is formed;
- a first via plug and a first metal line respectively formed by filling the first via hole and the first trench with a first metal, a predetermined scratch being formed on the first metal line;
- and
- a second via plug and a second metal line respectively formed by filling a second via hole and a second trench with a second metal, the second metal lines being separated.
6-20. (canceled)
Dependencies are inferred from the claim text.