Method for Packaging Semiconductor Dies Having Through-Silicon Vias

A method for forming a package structure, the method comprising:

• providing a die comprising:
• a front surface;
• a back surface on an opposite side of the front surface;
• and
• a through-silicon via (TSV) exposed through the back surface of the die;
• and
• attaching an anisotropic conducing film (ACF) to the back surface of the die, wherein the TSV penetrates into the ACF.

A method of forming a package structure, the method comprising:

• providing a semiconductor wafer;
• providing an integrated wafer-mount tape comprising:
• a ultra-violet wafer-mount tape;
• and
• an anisotropic conducting film (ACF) on an opposite side of the integrated wafer-mount tape than the ultra-violet wafer-mount tape;
• attaching the semiconductor wafer to the integrated wafer-mount tape, wherein a back surface of the wafer is in contact with the ACF;
• sawing the semiconductor wafer to separate dies in the semiconductor wafer;
• exposing the ultra-violet wafer-mount tape to an ultra-violet light;
• detaching the ultra-violet wafer-mount tape from the ACF;
• and
• mounting a die separated from the semiconductor wafer onto a package substrate, wherein the ACF is between the die and the package substrate.