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US 2009/0020842 A1Published application
Embedded bonding pad for backside illuminated image sensor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsGwo-Yuh Shiau, Chia-Shiung Tsai
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Abstract
The present disclosure provide a microelectronic device. The microelectronic device includes a sensing element formed in the semiconductor substrate; a trench isolation feature formed in the semiconductor substrate; a bonding pad formed at least partially in the trench isolation feature; and interconnect features formed over the sensing element and the trench isolation feature, being coupled to the sensing element and the bonding pad, and isolated from each other by interlayer dielectric.
Claims20
A microelectronic device, comprising:
- a sensing element formed in a semiconductor substrate;
- a trench isolation feature formed in the semiconductor substrate;
- a bonding pad formed at least partially in the trench isolation feature;
- and
- interconnect features formed over the sensing element and the trench isolation feature, coupled to the sensing element and the bonding pad, and isolated from each other by interlayer dielectric.
2 more elements
A device, comprising:
- a semiconductor substrate having a front surface and a back surface;
- a sensing element on the front surface of the semiconductor substrate;
- a trench isolation feature on the front surface of the semiconductor substrate;
- a bonding pad at least partially in the trench isolation feature;
- interconnect features over the sensing element and trench isolation feature, configured to be coupled with the sensing element and the bonding pad;
- and
- a passivation layer on the interconnect features of the semiconductor substrate, the passivation layer configured so that a carrier substrate can be bonded to the front surface of the semiconductor substrate such that the interconnect features are interposed between the semiconductor substrate and the carrier substrate.
4 more elements
A semiconductor device, comprising:
- a microelectronic circuit element formed in a semiconductor substrate;
- a shallow trench isolation formed in the semiconductor substrate;
- a bonding pad formed at least partially in the shallow trench isolation;
- and
- interconnects formed over the microelectronic device and the shallow trench isolation.
2 more elements
Dependencies are inferred from the claim text.