Semiconductor device and manufacturing method thereof
AssigneeNanya Technology Corporation
InventorShian-Jyh Lin
Life of this patent
Estimating the term…
Abstract
A long channel semiconductor device and a manufacturing method thereof are provided. The method for forming a long channel semiconductor device includes: providing a substrate; forming a trench in the substrate with a trench bottom defining a first channel length; forming a spacer on a sidewall of the trench; recessing the trench bottom to form a recessed bottom defining a second channel length longer than the first channel length; forming a gate dielectric layer on the recessed bottom; forming a gate conductor on the gate dielectric layer; and forming source/drain regions in the substrate adjacent to the spacer.
Claims11
A method for forming a semiconductor device with a recessed channel comprising:
- providing a substrate;
- forming a trench in said substrate;
- forming a spacer on a sidewall of said trench;
- recessing a bottom of said trench to form a recessed bottom with a conical sidewall and an arcuate tip immediately adjacent to said conical sidewall;
- forming a gate dielectric layer on a surface of said recessed bottom;
- forming a gate conductor on said gate dielectric layer;
- and
- forming source/drain regions in said substrate adjacent to said spacer.
A semiconductor device comprising:
- a substrate;
- a trench in said substrate, wherein said trench has a vertical sidewall and a recessed bottom and said recessed bottom is formed with a conical sidewall and an arcuate tip;
- a spacer on said vertical sidewall of said trench;
- a gate dielectric layer on said recessed bottom;
- a gate formed in said trench, and being in contact with said gate dielectric layer;
- and
- source/drain regions formed in said substrate and adjacent to said spacer.
A method for forming a trench in a semiconductor substrate comprising:
- forming a trench with a sidewall and a bottom in said semiconductor substrate;
- forming a first spacer on said sidewall;
- recessing the bottom of said trench to form a conical bottom;
- forming a second spacer on said first spacer to partially expose said conical bottom;
- and
- rounding said exposed conical bottom to form an arcuate bottom in said semiconductor substrate.
Dependencies are inferred from the claim text.