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US 2009/0020835 A1Published application
Insulating film and electronic device
AssigneeKabushiki Kaisha Toshiba
InventorsTatsuo Shimizu, HIdeki Satake
Life of this patent
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Abstract
An electronic device including a semiconductor layer containing silicon as a major component; and a dielectric film epitaxially grown directly on a major surface of the semiconductor layer, a difference between 21/2 times lattice constant of the dielectric film along the major plane and a lattice constant of the semiconductor layer along the major plane being not larger than 1.5%, wherein the dielectric film includes a dielectric material having a well layer, the well layer is expressed by a chemical formula mAO+nABO3 where a layer of a sodium chloride structure expressed by a chemical formula AO and a layer of a perovskite structure expressed by a chemical formula ABO3 are stacked.
Claims21
(canceled)
2:
- An electronic device comprising:
- a semiconductor layer containing silicon as a major component;
- and
- an epitaxially grown dielectric film provided on a major surface of the semiconductor layer, a difference between 21/2 times lattice constant of the dielectric film along the major plane and a lattice constant of the semiconductor layer along the major plane being not larger than 1.5%, wherein
- the dielectric film including a dielectric material having a well layer,
- the well layer is expressed by a chemical formula mAO+nABO3 (m being integer larger than 2, and n being integer larger than zero) where a layer of a sodium chloride structure expressed by a chemical formula AO and a layer of a perovskite structure expressed by a chemical formula ABO3 are stacked,
- the element A including at least one selected from a group consisting of Ba, Sr, Ca and Mg,
- a percentage of Mg content in the element A is not larger than 10%, and
- the element B including at least one selected from a group consisting of Ti, Zr and Hf.
6 more elements
3:
- The electronic device according to claim 2, wherein the following condition being satisfied:
- 2.5>d1/∈1
- where d1 (angstrom) is the thickness of the dielectric film and ∈1 is the relative permittivity of the dielectric film.
4:
- The electronic device according to claim 2, wherein
- an energy level of conduction band of the dielectric material is higher than an energy level of a conduction band of silicon by 1.0 electron volt or more.
5:
- The electronic device according to claim 2, further comprising:
- an electrode provided on the dielectric film.
6:
- The electronic device according to claim 5, wherein the semiconductor layer includes a source region and a drain region, the dielectric film is provided on a part of the major surface, the part is between the source region and the drain region, and the electrode is a gate electrode.
7:
- The electronic device according to claim 5, wherein the semiconductor layer, the dielectric film and the electrode form a capacitor.
8:
- An electronic device comprising:
- a semiconductor layer including silicon as a major component;
- and
- an epitaxially grown dielectric film provided on a major surface of the semiconductor layer, a difference between 21/2 times lattice constant of the dielectric film along the major plane and a lattice constant of the semiconductor layer along the major plane being not larger than 1.5%, wherein
- the dielectric film including a dielectric material having a well layer,
- the well layer has a structure where a layer expressed by a chemical formula mAO ABO3 (m being integer larger than zero) and a layer expressed by a chemical formula nAO 2ABO3 (n being integer larger than zero) are stacked by turns, including a layer of a sodium chloride structure expressed by a chemical formula AO and a layer of a perovskite structure expressed by a chemical formula ABO3,
- the element A including at least one selected from a group consisting of Ba, Sr, Ca and Mg,
- a percentage of Mg content in the element A is not larger than 10%, and
- the element B includes at least one selected from a group consisting of Ti, Zr and Hf.
6 more elements
9:
- The electronic device according to claim 8, wherein the following condition being satisfied:
- 2.5>d1/∈1
- where d1 (angstrom) is the thickness of the dielectric film and ∈1 is the relative permittivity of the dielectric film.
10:
- The electronic device according to claim 8, wherein
- energy level of conduction band of the dielectric material is higher than an energy level of a conduction band of silicon by 1.0 electron volt or more.
11:
- The electronic device according to claim 8, further comprising an electrode provided on the dielectric film.
12:
- The electronic device according to claim 11, wherein the semiconductor layer includes a source region and a drain region, the dielectric film is provided on a part of the major surface, the part is between the source region and the drain region, and the electrode is a gate electrode.
13:
- The electronic device according to claim 11, wherein the semiconductor layer, the dielectric film and the electrode form a capacitor.
14:
- The electronic device according to claim 2, further comprising:
- an epitaxially grown layer provided between the semiconductor layer and the dielectric film.
15:
- The electronic device according to claim 14, wherein the epitaxially grown layer includes a first electrode film.
16:
- The electronic device according to claim 15, further comprising:
- a second electrode film provided on the dielectric film.
17:
- The electronic device according to claim 16, wherein the first electrode film, the dielectric film, and the second electrode film form a capacitor.
18:
- The electronic device according to claim 8, further comprising:
- an epitaxially grown layer provided between the semiconductor layer and the dielectric film.
19:
- The electronic device according to claim 18, wherein the epitaxially grown layer includes a first electrode film.
20:
- The electronic device according to claim 19, further comprising:
- a second electrode film provided on the dielectric film.
21:
- The electronic device according to claim 20, wherein the first electrode film, the dielectric film, and the second electrode film form a capacitor.
Dependencies are inferred from the claim text.