Back to results
US 2009/0020831 A1Published application
Deuterated film encapsulation of nonvolatile charge trap memory device
AssigneeCypress Semiconductor Corporation
InventorsKrishnaswamy Ramkumar, Fredrick B. Jenne, William W. Koutny
Life of this patent
Estimating the term…
Abstract
A nonvolatile charge trap memory device with deuterium passivation of charge traps and method of manufacture. Deuterated gate layer, deuterated gate cap layer and deuterated spacers are employed in various combinations to encapsulate the device with deuterium sources proximate to the interfaces within the gate stack and on the surface of the gate stack where traps may be present.
Claims20
A nonvolatile charge trap memory device, comprising:
- a gate stack between a source and drain region, the gate stack comprising:
- a tunneling layer, a trapping layer, a blocking layer, a gate layer;
- and
- a deuterated gate cap layer;
- a gate stack spacer adjacent to a sidewall of the gate stack;
- and
- an interlayer dielectric layer on the gate stack and the gate stack spacer.
4 more elements
A nonvolatile charge trap memory device, comprising:
- a gate stack between a source and drain region, the gate stack comprising:
- a tunneling layer, a trapping layer, a blocking layer, and a gate layer;
- a deuterated gate stack spacer adjacent to a sidewall of the gate stack, wherein the deuterated gate stack spacer includes a first dielectric layer and a second dielectric layer on the first dielectric layer and at least one of the first dielectric layer and the second dielectric layer comprises deuterated silicon nitride;
- and
- an interlayer dielectric layer on the gate stack and on the gate stack spacer.
2 more elements
A method of fabricating a nonvolatile charge trap memory device, comprising:
- forming on a substrate a film stack comprising:
- a tunneling layer, a charge retention layer, a blocking layer, and a gate layer;
- forming on the gate layer a deuterated gate cap layer;
- and
- etching the deuterated gate cap layer and the film stack into a gate stack.
2 more elements
Dependencies are inferred from the claim text.