Printing of contact metal and interconnect metal via seed printing and plating

A method of making a device, comprising:

• a) forming a semiconductor layer on least part of a substrate;
• b) forming a gate dielectric on the semiconductor layer;
• c) forming a gate on the gate dielectric, where at least one of the gate and the semiconductor layer comprises elemental silicon;
• d) diffusing a dopant into the semiconductor layer;
• e) depositing an ink containing a silicide-forming metal onto an exposed silicon surface;
• and
• f) heating the silicide-forming metal and the silicon to form a metal silicide contact.

A method of making a device, comprising:

• a) forming a patterned doped dielectric on a substrate, the patterned doped dielectric containing a dopant;
• b) forming a continuous semiconductor layer on least part of adjacent structures in the patterned doped dielectric and a gap between the adjacent structures;
• c) forming a gate dielectric on the continuous semiconductor layer, at least over the gap;
• d) diffusing the dopant into regions of the continuous semiconductor layer within a diffusion distance of the patterned, doped dielectric;
• and
• e) forming a gate on the gate dielectric.

An electrical device, comprising:

• a) a substrate having a silicon surface thereon;
• b) a dielectric material having an opening therein exposing a part of the silicon surface;
• c) a metal silicide layer in the opening, on the exposed part of the silicon surface;
• d) a metal seed layer pattern on the dielectric material, continuous with the metal silicide layer;
• and
• e) optionally a bulk conductive metal plated on the metal silicide layer pattern and the metal seed layer, forming an interconnect.