Integrated Schottky Diode and Power MOSFET
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWan-Hua Huang, Kuo-Ming Wu, Yi-Chun Lin, Ming Xiang Li
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Abstract
A semiconductor structure includes a semiconductor substrate; a first well region of a first conductivity type in the semiconductor substrate; a metal-containing layer on the first well region, wherein the metal-containing layer and the first well region form a Schottky barrier; and a first heavily doped region of the first conductivity type in the first well region, wherein the first heavily doped region is horizontally spaced apart from the metal-containing layer.
Claims20
A semiconductor structure comprising:
- a semiconductor substrate;
- a first well region of a first conductivity type in the semiconductor substrate;
- a metal-containing layer on the first well region, wherein the metal-containing layer and the first well region form a Schottky barrier;
- and
- a first heavily doped region of the first conductivity type in the first well region, wherein the first heavily doped region is horizontally spaced apart from the metal-containing layer.
A semiconductor structure comprising:
- a semiconductor substrate;
- a first well region of a first conductivity type in the semiconductor substrate;
- a Schottky diode comprising:
- a metal-containing layer on the first well region, wherein the metal-containing layer and the first well region form a Schottky barrier;
- and
- a MOSFET comprising:
- a second well region of a second conductivity type opposite the first conductivity type in the first well region;
- a gate dielectric extending from over the first well region to over the second well region;
- a gate electrode on the gate dielectric;
- a source region of the first conductivity type in the second well region and adjacent the gate electrode, wherein the source region is electrically connected to the metal-containing layer;
- and
- a drain region of the first conductivity type in the first well region and adjacent the gate electrode.
A semiconductor structure comprising:
- a semiconductor substrate;
- a first leg comprising;
- a first n-well region in the semiconductor substrate;
- a Schottky diode comprising:
- a metal-containing layer on the first n-well region;
- and
- a first MOSFET comprising:
- a first drain region in the first n-well region;
- a first p-body in the first n-well region and on an opposite side of the first drain region than the metal-containing layer;
- and
- a first source region in the first p-body, wherein the first source region is electrically connected to the metal-containing layer;
- and
- a second leg comprising:
- a second n-well region;
- a second p-body in the second well region;
- a second MOSFET comprising:
- a second source region in the p-body;
- and
- a second drain region in the second n-well region;
- and
- a third MOSFET comprising:
- a third source region in the p-body, wherein the second and the third source regions adjoin a heavily doped p-type region, and wherein the second and the third source regions are electrically connected to the metal-containing layer;
- and
- a third drain region in the second n-well region, wherein the first, the second and the third drain regions are interconnected.
Dependencies are inferred from the claim text.