Semiconductor device and method for manufacturing the same
OwnerTomohiro Fujitainventor
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Abstract
A semiconductor device of the present invention includes a first transistor, a first stress-inducing film, a first insulating film, and a second insulating film. The first transistor is formed in a first active region of a semiconductor substrate, and includes a first gate electrode. The first stress-inducing film is formed so as to cover the first gate electrode, and applies a stress to the channel region of the first transistor. The first insulating film is formed on the first stress-inducing film and has a planarized upper surface. The second insulating film is formed on the first insulating film.
Claims20
A semiconductor device, comprising:
- a first transistor of a first conductivity type having a first gate electrode formed above a first active region of a semiconductor substrate;
- a first stress-inducing film formed over the first active region so as to cover the first gate electrode for applying a stress to a channel region of the first transistor;
- a first insulating film formed on the first stress-inducing film and having a planar upper surface;
- and
- a second insulating film formed on the first insulating film.
A method for manufacturing a semiconductor device, the method comprising:
- a step (a) of forming a first transistor having a first gate electrode above a first active region of a semiconductor substrate and forming a second transistor having a second gate electrode above a second active region;
- a step (b) of forming a first stress-inducing film over the semiconductor substrate so as to cover the first gate electrode and the second gate electrode;
- a step (c) of forming a first insulating film over the semiconductor substrate so as to cover the first stress-inducing film and then planarizing an upper surface of the formed first insulating film;
- a step (d) of selectively removing a portion of the first insulating film and a portion of the first stress-inducing film that are formed above the second active region;
- a step (e) of forming a second stress-inducing film over the semiconductor substrate so as to cover the second gate electrode and the first insulating film;
- a step (f) of selectively removing a portion of the second stress-inducing film that is formed above the first active region;
- and
- a step (g) of forming a second insulating film so as to cover the first insulating film and the second stress-inducing film.
Dependencies are inferred from the claim text.