Semiconductor device and method for fabricating the same
AssigneePanasonic Corporation
InventorsKentaro NAKANISHI, Hiromasa FUJIMOTO, Takayuki YAMADA
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Abstract
A semiconductor device includes an n-type MIS transistor and a p-type MIS transistor. The n-type MIS transistor includes a first gate electrode formed on a first active region and a first sidewall formed on the side face of the first gate electrode. The p-type MIS transistor includes a second gate electrode formed on a second active region, a second sidewall formed on the side face of the second gate electrode and strain layers formed in the second active region. The second sidewall has a smaller thickness than the first sidewall.
Claims14
A semiconductor device comprising:
- an n-type MIS transistor formed on a first active region of a semiconductor substrate and including a first gate electrode formed on the first active region and a first sidewall formed on a side face of the first gate electrode;
- and
- a p-type MIS transistor formed on a second active region of the semiconductor substrate and including a second gate electrode formed on the second active region, a second sidewall formed on a side face of the second gate electrode and having a smaller thickness along a gate length direction than the first sidewall, and strain layers formed in the second active region for applying strain in a channel region of the p-type MIS transistor.
A method for fabricating a semiconductor device including an n-type MIS transistor formed on a first active region of a semiconductor substrate and a p-type MIS transistor formed on a second active region of the semiconductor substrate, comprising the steps of:
- (a) forming a first gate electrode on the first active region and forming a second gate electrode on the second active region;
- (b) forming a sidewall forming film on the semiconductor substrate so as to cover the first gate electrode and the second gate electrode;
- (c) reducing a thickness of the sidewall forming film in a portion thereof disposed on the second active region to be smaller than in a portion thereof disposed on the first active region;
- (d) etching the sidewall forming film for exposing a part of the second active region with the first active region covered with the sidewall forming film after the step (c);
- (e) forming a recess by etching the exposed part of the second active region with the sidewall forming film used as a mask and forming a strain layer in the recess after the step (d);
- and
- (f) forming a first sidewall on a side face of the first gate electrode and a second sidewall on a side face of the second gate electrode by etching the sidewall forming film until a part of the first active region is exposed after the step (e).
Dependencies are inferred from the claim text.