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US 2009/0020815 A1Published application
Semiconductor device and manufacturing method of the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHiromichi Godo
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Abstract
An object of the present invention is to provide a semiconductor device having a structure which can realize not only suppressing a punch-through current but also reusing a silicon wafer which is used for bonding, in manufacturing a semiconductor device using an SOI technique, and a manufacturing method thereof. The semiconductor device can suppress the punch-through current by forming a semiconductor film in which an impurity imparting a conductivity type opposite to that of a source region and a drain region is implanted over a substrate having an insulating surface, and forming a channel formation region using a semiconductor film of stacked layers obtained by bonding a single crystal semiconductor film to the semiconductor film by an SOI technique.
Claims30
A semiconductor device comprising:
- a substrate having an insulating surface;
- a first semiconductor film formed over the substrate;
- and
- a second semiconductor film bonded to the first semiconductor film, wherein the second semiconductor film comprises a single crystal semiconductor,
- wherein a source region and a drain region are formed in the first semiconductor film and the second semiconductor film,
- wherein a channel formation region is formed in a portion of the second semiconductor film between the source region and the drain region,
- wherein the source region and the drain region comprise a first conductivity type impurity,
- wherein a part of the first semiconductor film under the channel formation region comprises a second conductivity type impurity of which conductivity type is opposite to a conductivity type of the first conductivity type impurity.
5 more elements
A semiconductor device comprising:
- a substrate having an insulating surface;
- a first semiconductor film formed over the substrate;
- and
- a second semiconductor film bonded to the first semiconductor film, wherein the second semiconductor film comprises a single crystal semiconductor;
- a gate electrode over the second semiconductor film;
- and
- sidewall insulating layers formed on either side of the gate electrode;
- wherein a source region and a drain region are formed in the first semiconductor film and the second semiconductor film,
- wherein a channel formation region is formed in a portion of the second semiconductor film between the source region and the drain region,
- wherein the source region and the drain region comprise a first conductivity type impurity,
- wherein a part of the first semiconductor film under the channel formation region comprises a second conductivity type impurity of which conductivity type is opposite to a conductivity type of the first conductivity type impurity,
- wherein first and second lightly doped regions are formed under the sidewall insulating layers in the first semiconductor film and the second semiconductor film,
- wherein the first lightly doped region is formed between the source region and the channel formation region;
- wherein the second lightly doped region is formed between the drain region and the channel formation region;
11 more elements
A method for manufacturing a semiconductor device comprising the steps of:
- forming a first semiconductor film over a substrate having an insulating surface, wherein the first semiconductor film comprises a first conductivity type impurity;
- forming an ion separation layer in a region of a predetermined depth below a surface of a single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with at least one kind of ions generated by plasma excitation of a source gas selected from the group consisting of hydrogen, helium, and halogen, wherein the ions are constituted by the same element;
- bonding the surface of the single crystal semiconductor substrate to the surface of the first semiconductor film;
- generating a crack in the ion separation layer by heating the bonded single crystal semiconductor substrate and the first semiconductor film;
- and
- forming a second semiconductor film by separating the single crystal semiconductor substrate at the crack in the ion separation layer with the second semiconductor film left on the first semiconductor film.
3 more elements
A method for manufacturing a semiconductor device comprising the steps of:
- forming a first semiconductor film over a substrate having an insulating surface;
- implanting a first conductivity type impurity into a first portion of the first semiconductor film;
- implanting a second conductivity type impurity into a second portion of the first semiconductor film, wherein the second conductivity type impurity is opposite to a conductivity type of the first conductivity type impurity;
- forming an ion separation layer in a region of a predetermined depth below a surface of a single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with at least one kind of ions generated by plasma excitation of a source gas selected from the group consisting of hydrogen, helium, and halogen, wherein the ions are constituted by the same element;
- bonding the surface of the single crystal semiconductor substrate to the surface of the first portion and the second portion of the first semiconductor film;
- generating a crack in the ion separation layer by heating the bonded single crystal semiconductor substrate and the first portion and the second portion of the first semiconductor film;
- and
- forming a second semiconductor film by separating the single crystal semiconductor substrate at the crack in the ion separation layer with the second semiconductor film left on the first portion and the second portion of the first semiconductor film.
5 more elements
Dependencies are inferred from the claim text.