Formation of lateral trench fets (field effect transistors) using steps of ldmos (lateral double-diffused metal oxide semiconductor) technology

Abstract

A semiconductor structure and a method forming the same. The method includes providing a semiconductor structure which includes a semiconductor substrate. The semiconductor substrate includes a top substrate surface which defines a reference direction perpendicular to the top substrate surface. The method further includes simultaneously forming a first doped transistor region of a first transistor and a first doped Source/Drain portion of a second transistor on the semiconductor substrate. The first doped transistor region is not a portion of a Source/Drain region of the first transistor. The first doped transistor region and the first doped Source/Drain portion comprise dopants of a first doping polarity. The method further includes forming a second gate dielectric layer and a second gate electrode region of the second transistor on the semiconductor substrate. The second gate dielectric layer is sandwiched between and electrically insulates the second gate electrode region and the semiconductor substrate.

Dependencies are inferred from the claim text.