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US 2009/0020809 A1Published application
Semiconductor device including trench gate transistor and method of forming the same
AssigneeElpida Memory, Inc.
InventorsYoshihiro Kitamura, Toru Miyazaki
Life of this patent
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Abstract
A semiconductor device includes an active region having a groove, a gate insulating film, and a gate electrode. The gate electrode may include first and second layers. The first layer extends along the gate insulating film. The first layer is electrically conductive. The second layer extends along the first layer. The second layer is separate from the gate insulating film by the first layer.
Claims20
A semiconductor device comprising:
- an active region having a groove;
- a gate insulating film extending along the inside wall of the groove;
- and
- a gate electrode in the groove, the gate electrode comprising:
- a first layer extending along the gate insulating film, the first layer being electrically conductive;
- and
- a second layer extending along the first layer, the second layer being separate from the gate insulating film by the first layer, and the second layer being different in thermal property from the first layer.
4 more elements
A semiconductor device comprising:
- an active region having a groove;
- a gate insulating film extending along the inside wall of the groove;
- and
- a gate electrode in the groove, the gate electrode comprising:
- a first layer extending along the gate insulating film, the first layer being electrically conductive, the first layer being free of any void adjacent to the gate insulating film;
- and
- a second layer extending along the first layer, the second layer being separate from the gate insulating film by the first layer.
4 more elements
A semiconductor device comprising:
- an active region having a groove, the groove having an expanded portion that is wider than the opening of the groove;
- a gate insulating film extending along the inside wall of the groove;
- and
- a gate electrode in the groove, the gate electrode having a multi-layered structure in at least the expanded portion of the groove, the multi-layered structure comprising:
- a first layer extending along the gate insulating film, the first layer being electrically conductive;
- and
- a second layer extending along the first layer, the second layer being separate from the gate insulating film by the first layer.
4 more elements
Dependencies are inferred from the claim text.