Semiconductor integrated circuit devices and fabrication methods thereof
AssigneeSamsung Electronics Co., Ltd.
InventorMan-Jong Yu
Life of this patent
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Abstract
A memory cell of memory device, comprises an active region of a memory cell defined in a semiconductor substrate, and a conductive gate electrode in a trench of the active region. The gate electrode is isolated from the semiconductor substrate. An insulation layer is on the active region and on the conductive gate electrode. A conductive contact is in the insulation layer on the active region at a side of the gate electrode and isolated from the gate electrode. The contact has a first width at a top portion thereof and a second width at a bottom portion thereof, the first width being greater than the second width. The contact is formed of a single-crystal material.
Claims25
A memory cell of memory device, comprising:
- an active region of a memory cell defined in a semiconductor substrate;
- a conductive gate electrode in a trench of the active region, the gate electrode being isolated from the semiconductor substrate;
- an insulation layer on the active region and on the conductive gate electrode;
- and
- a conductive contact in the insulation layer on the active region at a side of the gate electrode and isolated from the gate electrode, the contact having a first width at a top portion thereof and having a second width at a bottom portion thereof, the first width being greater than the second width, the contact being formed of a single-crystal material.
Dependencies are inferred from the claim text.