Semiconductor device and method for fabricating the same

Abstract

Disclosed are a semiconductor device and a method for fabrication of the same. The fabrication method may include selectively forming an oxide layer pattern on a semiconductor substrate, forming an insulation layer pattern on the same substrate to cover edge portions of the oxide layer pattern, etching the oxide layer pattern and the substrate to form a recess as well as first and second oxide layer patterns corresponding to the edge portions of the oxide layer pattern, forming a third oxide layer pattern on the substrate in the recess to produce a gate insulation layer comprising the first, second, and third oxide layer patterns, and forming a gate pattern in the recess. The fabricated semiconductor device minimizes occurrence of current leakage such as gate induction drain leakage, among other things, thereby improving transistor performance.

Dependencies are inferred from the claim text.