Non-volatile memory devices and methods of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJin-Hwa Heo, Chul-Sung Kim, Bon-Young Koo, Ki-Hyun Hwang, Chang-Hyun Lee
Life of this patent
Estimating the term…
Abstract
A non-volatile memory device includes a dielectric layer between a charge storage layer and a substrate. Free bonds of the dielectric layer can be reduced to reduce/prevent charges from leaking through the free bonds and/or from being trapped by the free bonds. As a result, data retention properties and/or durability of a non-volatile memory device may be enhanced.
Claims19
A non-volatile memory device comprising:
- a dielectric layer including an oxide layer on a substrate, the dielectric layer including at least two regions therein that each extend across at least a major extent of the dielectric layer and have significantly higher nitrogen concentration relative to other regions of the dielectric layer;
- a charge storage layer on the dielectric layer;
- a blocking insulating layer on the charge storage layer;
- and
- a gate electrode on the blocking insulating layer.
A method of forming a non-volatile memory device, the method comprising:
- forming a dielectric layer including a nitride layer on a substrate;
- transforming at least a portion of the nitride layer extending across at least a major lateral extent of the dielectric layer to include added oxygen;
- forming a charge storage layer on the dielectric layer;
- forming a blocking insulating layer on the charge storage layer;
- and
- forming a gate electrode on the blocking insulating layer.
A method of forming a non-volatile memory device, the method comprising:
- forming a dielectric layer on a substrate;
- reacting at least a major portion of free bonds remaining in the dielectric layer to each other;
- forming a charge storage layer on the dielectric layer;
- forming a blocking insulating layer on the charge storage layer;
- and
- forming a gate electrode on the blocking insulating layer.
A method of forming a non-volatile memory device, the method comprising:
- forming an oxide layer on a substrate;
- forming a nitride layer on the oxide layer;
- oxidizing at least a portion of the nitride layer;
- forming a charge storage layer on the oxidized nitride layer;
- forming a blocking insulating layer on the charge storage layer;
- and
- forming a gate electrode on the blocking insulating layer.
Dependencies are inferred from the claim text.