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AssigneeIndustrial Technology Research Institute
InventorsChih-Yuan Tseng, I Hsuan Peng, Yung-Hui Yeh, Jung-Jie Huang, Cheng-Ju Tsai
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A method of directly depositing a polysilicon film at a low temperature is disclosed. The method comprises providing a substrate and performing a sequential deposition process. The sequential deposition process comprises first and second deposition steps. In the first deposition step, a first bias voltage is applied to the substrate, and plasma chemical vapor deposition is utilized to form a first polysilicon sub-layer on the substrate. In the second deposition step, a second bias voltage is applied to the substrate, and plasma chemical vapor deposition is utilized to form a second polysilicon sub-layer on the first sub-layer. The first and second sub-layers constitute the polysilicon film, and the first bias voltage differs from the second bias voltage.
A method of depositing a polysilicon film directly at a low temperature, comprising:
A vapor deposition apparatus, which is plasma chemical vapor deposition apparatus, used to deposit a low temperature polysilicon thin film on a substrate, comprising:
Dependencies are inferred from the claim text.