Semiconductor device using semiconductor nanowire and display apparatus and image pick-up apparatus using the same
AssigneeCanon Kabushiki Kaisha
InventorsShunsuke SHIOYA, Sotomitsu Ikeda
Life of this patent
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Abstract
A semiconductor device, comprising a semiconductor nanowire having a first region with one of a PN junction and a PIN junction and a second region with a field effect transistor structure, a pair of electrodes connected to both ends of the semiconductor nanowire, and a gate electrode provided in at least a part of the second region via an insulating layer. The semiconductor nanowire has a P-type semiconductor portion and an N-type semiconductor portion, and one of the P-type semiconductor portion and the N-type semiconductor portion is a common structural element of both the first and second regions.
Claims8
A semiconductor device, comprising:
- a semiconductor nanowire having a P-type semiconductor portion and an N-type semiconductor portion;
- a pair of electrodes connected to the semiconductor nanowire;
- and
- a gate electrode provided with respect to either one of the P-type semiconductor portion and the N-type semiconductor portion via an insulating layer,
- wherein a first region having one of a PN junction and a PIN junction and a second region having one of the P-type semiconductor and the N-type semiconductor as a channel region of a field effect transistor, the insulating layer as a gate insulating film, and the gate electrode are formed in different positions.
Dependencies are inferred from the claim text.