Semiconductor device
AssigneesInteruniversitair Microelektronica Centrum vzw (IMEC), STMicroelectronics (Crolles2) SAS
InventorsDamien Lenoble, Nadine Collaert
Life of this patent
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Abstract
A method for forming a semiconductor device on a substrate having a first major surface lying in a plane and the semiconductor device are disclosed. In one aspect, the method comprises, after patterning the substrate to form at least one structure extending from the substrate in a direction substantially perpendicular to a major surface of the substrate, forming locally modified regions at locations in the substrate not covered by the structure, thus locally increasing etching resistance of these regions. Forming locally modified regions may prevent under-etching of the structure during further process steps in the formation of the semiconductor device.
Claims28
A method of forming a semiconductor device on a substrate, the method comprising:
- patterning a first major surface of a substrate to form at least one structure extending from the substrate in a direction substantially perpendicular to the plane of the first major surface;
- and
- forming at least one locally modified region at a location in the substrate which is not covered by the at least one structure, thus locally increasing etching resistance of the region.
A semiconductor device comprising:
- at least one structure extending from a substrate having a first major surface lying in a plane, the at least one structure extending in a direction substantially perpendicular to the plane of the first major surface;
- and
- at least one locally modified region in the substrate at a location not covered by the at least one structure, the locally modified region having an increased etch resistance with respect to the etch resistance of non-modified regions of the substrate.
Dependencies are inferred from the claim text.