Nitride-based semiconductor light emitting device and method for fabricating same

A method for fabricating a nitride-based semiconductor light emitting device, comprising:

• providing a substrate;
• epitaxially growing a nitride-based multi-layered structure on the substrate, the multi-layered structure comprising a first-type layer, an active layer and a second-type layer arranged along a direction away from the substrate in the order written, wherein a crystal growth orientation of the multi-layered structure intersects with <0001> crystal orientation thereof;
• patterning the multi-layered structure to form a mesa structure thereon and whereby the first-type layer is partially exposed to form an exposed portion, the mesa structure having a top surface facing away from the substrate and a plurality of side surfaces adjoining the top surface;
• forming a first-type electrode and a second-type electrode respectively on the exposed portion and the top surface, so as to respectively come into ohmic contact with first-type layer and the second-type layer;
• and
• wet etching the patterned multi-layered structure so as to roughen the top surface and the side surfaces of the mesa structure.

A method for fabricating a nitride-based semiconductor light emitting device, comprising:

• providing a single crystal substrate having a crystal face, wherein the crystal face is one of a non-polar face and a semi-polar face;
• epitaxially growing a nitride-based multi-layered structure on the crystal face, wherein a crystal growth orientation of the multi-layered structure matches with an crystal orientation of the crystal face;
• treating the multi-layered structure to form a mesa structure thereon;
• forming a plurality of electrodes on the patterned multi-layered structure and electrically therewith;
• and
• wet etching the patterned multi-layered structure to roughen the mesa structure.