Light emitting diode with improved structure
AssigneeSeoul Opto Device Co., Ltd.
InventorsSang Joon LEE, Dae Sung KAL, Dae Won KIM
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Abstract
Disclosed is a light emitting diode (LED) with an improved structure. The LED comprises an N-type semiconductor layer, a P-type semiconductor layer and an active layer interposed between the N-type and P-type semiconductor layers. The P-type compound semiconductor layer has a laminated structure comprising a P-type clad layer positioned on the active layer, a hole injection layer positioned on the P-type clad layer, and a P-type contact layer positioned on the hole injection layer. Accordingly, holes are more smoothly injected into the active layer from the P-type semiconductor layer, thereby improving the recombination rate of electrons and holes.
Claims7
A light emitting diode (LED), comprising:
- an N-type semiconductor layer;
- a P-type semiconductor layer;
- and
- an active layer interposed between the N-type semiconductor layer and the P-type semiconductor layer,
- wherein the P-type semiconductor layer comprises a laminated structure, the laminated structure comprising:
- a P-type clad layer positioned on the active layer;
- a hole injection layer positioned on the P-type clad layer;
- and
- a P-type contact layer positioned on the hole injection layer.
Dependencies are inferred from the claim text.