Light-emitting device
AssigneeEpistar Corporation
InventorsJin-Ywan Lin, Tzer-Perng Chen, Pai-Hsiang Wang, Chih-Chiang Lu
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Abstract
A light-emitting device comprises a channel structure in the semiconductor layer for connecting an electrode and an ohmic contact layer by means of a substrate transfer process including a wafer-bonding process and a substrate-lifting-off process. The channel structure is formed in the semiconductor stack for electrically connecting the ohmic contact layer and the electrode and driving the current into the light-emitting device. Thereby, a horizontal type or a vertical type of light-emitting device has a good ohmic contact and high light efficiency.
Claims20
A light-emitting device comprising:
- a nitride semiconductor stack having an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer;
- a first conductive layer located on a first side of the n-type semiconductor layer;
- a second conductive layer located on a second side of the n-type semiconductor layer wherein the second side is opposite to the first side;
- wherein the n-type semiconductor layer having a first channel structure for electrically connecting to the first conductive layer and the second conductive layer.
A light-emitting device comprising:
- a nitride semiconductor stack having an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer;
- a first conductive layer located on a first side of the n-type semiconductor layer;
- a second conductive layer located on a second side of the n-type semiconductor layer wherein the second side is opposite to the first side;
- a third conductive layer located on a first side of the nitride semiconductor stack;
- a fourth conductive layer located on a second side of the nitride semiconductor stack wherein the second side is opposite to the first side;
- wherein the n-type semiconductor layer having a first channel structure for electrically connecting to the first conductive layer and the second conductive layer;
- the nitride semiconductor stack having a second channel structure for electrically connecting to the third conductive layer and the fourth conductive layer.
A light-emitting device comprising:
- a nitride semiconductor stack having a first semiconductor layer, a light-emitting layer and a second semiconductor layer;
- a first conductive layer located on a first side of the first semiconductor layer;
- a second conductive layer located on a second side of the second semiconductor layer wherein the second side is opposite to the first side;
- wherein the first semiconductor layer having a first channel structure for electrically connecting to the first conductive layer and the second conductive layer.
Dependencies are inferred from the claim text.