Light-emitting device and method for making the same
AssigneesLite-On Technology Corporation, National Chiao Tung University
InventorsChing-Hua CHIU, Hung-Wen HUANG, Hao-Chung KUO, Tien-Chang LU, Shing-Chung WANG, Chih-Ming LAI
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Abstract
A light-emitting device is capable of emitting a light having a wavelength ranging from 300 to 550 nm, and includes: a substrate; a p-type semiconductor layer disposed on the substrate; an active layer disposed on the p-type semiconductor layer; a n-type semiconductor layer disposed on the active layer and having a waveguide-disposing surface; and a waveguide structure formed on the waveguide-disposing surface of the n-type semiconductor layer and having a plurality of spaced apart nanorods extending from the waveguide-disposing surface.
Claims23
A light-emitting device capable of emitting a light having a wavelength ranging from 300 to 550 nm, comprising:
- a substrate;
- a p-type semiconductor layer disposed on said substrate;
- an active layer disposed on said p-type semiconductor layer;
- a n-type semiconductor layer disposed on said active layer and having a waveguide-disposing surface;
- first and second electrodes coupled electrically to said n-type semiconductor layer and said substrate, respectively;
- and
- a waveguide structure formed on said waveguide-disposing surface of said n-type semiconductor layer and having a plurality of spaced apart nanorods extending from said waveguide-disposing surface.
A method for making a light-emitting device capable of emitting a light having a wavelength ranging from 300 to 550 nm, comprising:
- (a) forming a multilayered structure on a first substrate, the multilayered structure including a n-type semiconductor layer disposed on the first substrate, an active layer disposed on the n-type semiconductor layer, and a p-type semiconductor layer disposed on the active layer;
- (b) attaching the multilayered structure to a second substrate and removing the first substrate from the multilayered structure so as to expose the n-type semiconductor layer;
- and
- (c) etching the n-type semiconductor layer to form a waveguide structure thereon, the waveguide structure including a plurality of spaced apart nanorods extending from the n-type semiconductor layer.
Dependencies are inferred from the claim text.