Semiconductor light emitting element

A semiconductor light emitting element having a rectangular shape in plan view including at least a first side and a second side adjacent to the first side, the semiconductor light emitting element comprising:

• a first conductivity-type semiconductor layer;
• a second conductivity-type semiconductor layer;
• a plurality of first electrodes having a long shape along the first side and being arranged on the first conductivity-type semiconductor layer in a lattice form of x columns (x≧2) along the first side and y rows (y>x) along the second side;
• and
• a second electrode arranged on the second conductivity-type semiconductor layer,
• wherein the first electrode and the second electrode are arranged on the same surface side, and the first electrode is surrounded by the first conductivity-type semiconductor layer, the second conductivity-type semiconductor layer, and the second electrode,
• wherein a distance D1 is larger than a distance D2, and
• wherein D1 is a distance between the first electrodes in the row direction, and D2 is a distance between the first electrodes in the column direction.

A semiconductor light emitting element having a rectangular shape in plan view including at least a first side and a second side adjacent to the first side, the semiconductor light emitting element comprising:

• a first conductivity-type semiconductor layer;
• a second conductivity-type semiconductor layer;
• a plurality of first electrodes having a long shape along the first side and being arranged on the first conductivity-type semiconductor layer in a lattice form of x columns (x≧2) along the first side and y rows (y>x) along the second side;
• and
• a second electrode arranged on the second conductivity-type semiconductor layer,
• wherein the first electrode and the second electrode are arranged on the same surface side, and the first electrode is surrounded by the first conductivity-type semiconductor layer, the second conductivity-type semiconductor layer, and the second electrode,
• wherein the plurality of first electrodes are arranged at essentially equidistance in the row direction, and a distance D1 is larger than a distance D3, and
• wherein D1 is a distance between the first electrodes in the row direction, and D3 is a distance between the first electrode closest to the second side and an end of the second conductivity-type semiconductor layer on the second side.