Semiconductor Device and Method for Manufacturing Same
AssigneeRohm Co., Ltd.
InventorMineo Miura
Life of this patent
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Abstract
A semiconductor device includes a first conductive type SiC semiconductor substrate; a second conductive type well formed on the SiC semiconductor substrate; a first impurity diffusion layer formed by introducing a first conductive type impurity so as to be partly overlapped with the well in a region surrounding the well; a second impurity diffusion layer formed by introducing the first conductive type impurity in a region spaced apart for a predetermined distance from the impurity diffusion layer in the well; and a gate electrode opposed to a channel region between the first and the second impurity diffusion layers with gate insulating film sandwiched therebetween.
Claims5
A semiconductor device, comprising:
- a first conductive type SiC semiconductor substrate;
- a second conductive type well formed on the SiC semiconductor substrate, the second conductive type being different from the first conductive type;
- a first impurity diffusion layer formed by introducing an impurity of the first conductive type so as to be partly overlapped with the well in a region surrounding the well in the SiC semiconductor substrate;
- a second impurity diffusion layer formed by introducing an impurity of the first conductive type in a region spaced apart for a predetermined distance from the impurity diffusion layer in the well;
- and
- a gate electrode opposed to a channel region between the first impurity diffusion layer and the second impurity diffusion layer with a gate insulating film sandwiched therebetween.
A method of manufacturing the semiconductor device, comprising the steps of:
- forming a well by introducing, into a first conductive type SiC semiconductor substrate, a second conductive type impurity;
- forming a first impurity diffusion layer by introducing an impurity of the first conductive type so as to be partly overlapped with the well in a region surrounding the well in the SiC semiconductor substrate;
- forming a second impurity diffusion layer by introducing an impurity of the first conductive type in a region spaced apart for a predetermined distance from the impurity diffusion layer in the well;
- and
- disposing a gate electrode as opposing to a channel region between the first impurity diffusion layer and the second impurity diffusion layer with a gate insulating film sandwiched therebetween.
Dependencies are inferred from the claim text.