US 2009/0020759 A1 · Light-emitting device

Abstract

It is an object to provide a light-emitting device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the light-emitting device with high productivity. As for a light-emitting device including an inverted staggered thin film transistor of a channel stop type, the inverted staggered thin film transistor includes a gate electrode, a gate insulating film over the gate electrode, a microcrystalline semiconductor film including a channel formation region over the gate insulating film, a buffer layer over the microcrystalline semiconductor film, a channel protective layer which is provided over the buffer layer so as to overlap with the channel formation region of the microcrystalline semiconductor film, a source region and a drain region over the channel protective layer and the buffer layer, and a source electrode and a drain electrode over the source region and the drain region.

Claims18

Dependent claims

A light-emitting device comprising:

a gate electrode over a substrate;
a gate insulating film formed over the gate electrode;
a microcrystalline semiconductor film including a channel formation region formed over the gate insulating film;
a buffer layer formed over and being in contact with the microcrystalline semiconductor film;
a channel protective layer formed over and being in contact with the buffer layer wherein the channel protective layer overlaps the channel formation region;
a source region and a drain region formed over the channel protective layer and the buffer layer;
a source electrode and a drain electrode formed over the source region and the drain region;
and
a pixel electrode electrically connected to one of the source electrode and the drain electrode.

6 more elements

Dependencies are inferred from the claim text.

Light-emitting device

Life of this patent

Light-emitting device

Life of this patent

Abstract

Claims18