Stacked multilayer structure and manufacturing method thereof

A nonvolatile semiconductor device comprising:

• a stacked layer part including a plurality of conducting layers, a plurality of insulating layers and a plurality of semiconductor pillars, said plurality of insulating layers being stacked alternately with each layer of said plurality of conducting layers, one of said plurality of insulating layers being a topmost layer among said plurality of conducting layers and said plurality of insulating layers, and each of said plurality of semiconductor pillars having a nonvolatile memory cell around the section of penetration into each of said plurality of conducting layers;
• a plurality of contacts, each contact of said plurality of contacts being formed from said topmost layer and each contact of said plurality of contacts being in contact with a respective conducting layer of said plurality of conducting layers, a side surface of each of said plurality of contacts being insulated from said plurality of conducting layers via an insulating film;
• and
• a driving circuit being connected to each of said plurality of conducting layers respectively via said plurality of contacts.

A manufacturing method of a stacked multilayer structure comprising:

• stacking a conducting layer and a plurality of insulating layer alternately, one of said insulating layer being a topmost layer among a plurality of insulating layers and a plurality of conducting layers;
• forming a plurality of contact holes, each bottom surface of said plurality of contact holes being in contact with said conducting layers respectively from said topmost layer;
• forming an insulating film on a side surface of said plurality of contact holes;
• and
• forming contacts by depositing conducting material inside said plurality of contact holes.