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AssigneesHynix Semiconductor Inc., Seoul National University R&Db Foundation
InventorsNam Kyun PARK, Hae Chan PARK, Cheol Seong HWANG, Byung Joon CHOI
Estimating the term…
A phase change memory device includes a semiconductor substrate having a plurality of phase change cell regions. A bottom electrode is formed in each phase change cell region of the semiconductor substrate. An insulation layer is formed on the semiconductor substrate to cover the bottom electrode, and the insulation layer includes a contact hole exposing the bottom electrode. A contact plug is formed within the contact hole. A stacked pattern comprising a phase change layer and a top electrode is formed over the insulation layer. In the phase change memory device a buffer layer is interposed between the insulation layer and the phase change layer to reinforce the adhesion force between them. The buffer layer prevents the phase change material from peeling off due to an inconstant adhesion force between the phase change material and the insulation layer.
A phase change memory device comprising:
A phase change memory device including a semiconductor substrate having a plurality of phase change cell regions, the phase change memory device comprising:
A phase change memory device including a semiconductor substrate having a plurality of phase change cell regions, the phase change memory device comprising:
Dependencies are inferred from the claim text.