Integrated circuit including force-filled resistivity changing material

A system comprising:

• a host;
• and
• a memory device communicatively coupled to the host, the memory device comprising:
• a first electrode;
• a second electrode;
• and
• void free and organic contaminant free resistivity changing material electrically coupled to the first electrode and the second electrode.

A memory comprising:

• a first electrode;
• a second electrode;
• and
• void free and organic contaminant free means for storing data between the first electrode and the second electrode.

A method for fabricating an integrated circuit, the method comprising:

• providing a preprocessed wafer including a first electrode;
• providing dielectric material including an opening exposing a portion of the first electrode over the preprocessed wafer;
• depositing resistivity changing material over the dielectric material;
• force-filling the opening with the resistivity changing material;
• and
• fabricating a second electrode over the resistivity changing material.

A method for fabricating a memory, the method comprising:

• providing a preprocessed wafer including a first electrode;
• providing a dielectric material layer including a pore exposing a portion of the first electrode over the preprocessed wafer;
• sputter depositing phase change material over the dielectric material layer;
• force-filling the pore with the phase change material to fill any voids within the pore;
• planarizing the phase change material to expose the dielectric material layer;
• and
• fabricating a second electrode contacting the phase change material.