Potentiometric Mg2+ Sensor and Method thereof
AssigneeChung Yuan Christian University
InventorsShen-Kan Hsiung, Jung-Chuan Chou, Tai-Ping Sun, Nien-Hsuan Chou, Wei-Feng Liang
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Abstract
A potentiometric Mg2+ sensor is disclosed, wherein the potentiometric SnO2/ITO-based Mg2+ ISE was developed in this invention. The magnesium ion-selective membrane was fabricated and dripped on the surface of SnO2. The performance, such as sensitivity, was exhibited by the magnesium ion-selective membrane having magnesium ionophore, K-TpClPB, plasticizer, PVC in the suitable ratios. Moreover, the Mg2+ ISE was measured in different Mg2+ concentration buffer solutions. According to the experimental results, the best sensitivity of the Mg2+ sensor is 31.7l mV/decade between 10-4M and 10-1M, and measurement time is 30 sec.
Claims27
A potentiometric magnesium ion sensor, comprising:
- a substrate;
- a conduction layer, deposited on said substrate;
- a SnO2 thin-film, deposited on said conduction layer;
- an insulation layer, wherein said conductive layer and said SnO2 thin-film is coated with said insulation layer, and an opening of said insulation layer is formed on the SnO2 thin-film;
- and
- a magnesium ion selective membrane, formed at said opening, wherein said magnesium ion selective membrane is only for magnesium ion to pass through.
A potentiometric magnesium ion system, comprising:
- a reference electrode which was held out at a reference potential;
- a potentiometric magnesium ion sensor, comprising:
- a substrate;
- a conduction layer, deposited on said substrate;
- a SnO2 thin-film, deposited on said conduction layer;
- an insulation layer, wherein coating said conductive layer and said SnO2 thin-film is coated with said insulation layer, and an opening of said insulation layer is formed on the SnO2 thin-film;
- and
- a magnesium ion-selective membrane, formed at said opening, wherein said magnesium ion-selective membrane is only for magnesium ion to pass through;
- and
- a amplifier, coupled with said conduction layer by a conducting line, wherein one side of the conducting line has coupling with the conduction layer and SnO2 thin-film, and another side of the conducting line has coupling with the amplifier passed insulation layer.
A potentiometric magnesium ion fabrication method, comprising the steps of:
- providing a substrate;
- forming an conduction layer on said substrate;
- depositing a SnO2 thin-film on said conduction layer by radio frequency sputtering method;
- connecting said conduction layer and said SnO2 thin-film with a conducting line by a conduction paste;
- forming an insulation layer, wherein said conduction layer, said SnO2 thin-film and one end of said conducting line are coated with said insulation layer, and an opening of said insulation layer is formed on the SnO2 thin-film;
- and
- dropping the material of a magnesium ion-selective membrane on said opening to form said magnesium ion-selective membrane.
Dependencies are inferred from the claim text.