Substrate Processing Method and Substrate Processing Apparatus

A substrate processing method, comprising:

• detecting emission intensity;
• calculating an amount of variance in emission intensity that has been detected;
• reading a process time when the amount of variance in emission intensity becomes constant after the amount of variance in emission intensity is determined as being larger than the emission intensity and a guard level pre-stored in a storage portion;
• making a comparison between the process time and a detection minimum time pre-stored in the storage portion;
• and
• terminating an ashing process when the process time is found to have passed the detection minimum time.

A substrate processing method, comprising:

• determining whether a process time has passed a detection minimum time by counting the process time;
• detecting emission intensity when the process time is found to have passed the detection minimum time;
• calculating an amount of variance in emission intensity that has been detected;
• and
• terminating an ashing process when the amount of variance in emission intensity becomes constant after the emission intensity that has been detected is determined as being larger than a guard level pre-stored in a storage portion.

A substrate processing method, comprising:

• carrying a substrate in a processing chamber and mounting the substrate on a substrate holder;
• generating a plasma after a process gas is supplied to the processing chamber;
• detecting emission intensity of the plasma that has been generated;
• calculating an amount of variance in emission intensity that has been detected;
• detecting an end point from the calculated amount of variance in emission intensity;
• making a comparison between the detected end point and a predetermined time;
• displaying a result of the comparison;
• and
• carrying the substrate out from the processing chamber after a plasma process is terminated.

A substrate processing method, comprising:

• carrying a substrate in a processing chamber and mounting the substrate on a substrate holder;
• generating a plasma by supplying an oxygen-containing gas;
• removing a resist by means of an oxygen plasma;
• detecting emission intensity of the oxygen plasma;
• calculating an amount of variance in emission intensity that has been detected;
• detecting an end point from the calculated amount of variance in emission intensity;
• making a comparison between the detected end point and a predetermined time;
• displaying a result of the comparison;
• and
• carrying the substrate out from the processing chamber after a plasma process is terminated.

A substrate processing apparatus, comprising:

• a gas supply portion that supplies a process gas;
• a plasma generation portion that generates a plasma;
• a processing chamber in which a wafer mounted on a wafer holder is processed by means of the plasma;
• a display portion;
• a timer that counts a process time;
• an emission intensity measuring portion;
• and
• a control portion that makes a comparison between the amount of variance in emission intensity detected by the emission intensity measuring portion and a guard level pre-stored in a storage portion to read a process time when the amount of variance in emission intensity becomes constant after the amount of variance in emission intensity is determined as being larger than the guard level, and makes a comparison between the process time and a detection minimum time pre-stored in the storage portion to terminate a plasma process when the process time is found to have passed the detection minimum time.