Plasma processing apparatus and plasma generation chamber
AssigneeTokyo Electron Limited
InventorDaisuke HAYASHI
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Abstract
A plasma processing apparatus comprises a processing chamber having installed therein a stage upon which a wafer W is placed and a plasma generation chamber communicating with the processing chamber. The plasma generation chamber includes a reaction container having a tubular side wall, a coil wound around the side wall, to which a specific level of high-frequency power is applied, and a film coating covering the outer surface of the side wall. The film coating is a thin film that blocks ultraviolet light originating from the plasma generated inside the reaction container and is constituted of an insulating material with a heat resisting property.
Claims12
A plasma processing apparatus that executes a specific type of processing on a processing target substrate with plasma generated by exciting a hydrogen-containing processing gas, comprising:
- a plasma generation chamber where plasma is generated by exciting the processing gas;
- a processing chamber communicating with said plasma generation chamber;
- and
- a stage disposed inside said processing chamber, upon which the processing target substrate is placed, wherein:
- said plasma generation chamber includes;
- a reaction container having a tubular side wall;
- a processing gas delivery unit through which said processing gas is delivered into said reaction container;
- a coil wound around said side wall, to which specific high-frequency power is applied and a film coating that covers the outer surface of said side wall;
- and
- said film coating is a thin film constituted of an insulating material with a heat resisting property, which blocks ultraviolet light originating from the plasma generated inside said reaction container.
A plasma processing apparatus that executes a specific type of processing on a processing target substrate with plasma generated by exciting a hydrogen-containing processing gas, comprising:
- a plasma generation chamber where plasma is generated by exciting the processing gas;
- a processing chamber communicating with said plasma generation chamber;
- and
- a stage disposed inside said processing chamber, upon which the processing target substrate is placed, wherein:
- said plasma generation chamber in said plasma processing apparatus includes:
- a reaction container having a side wall formed as an integrated member by layering a plurality of tubular members constituted of an insulating material with a vacuum sealed space set therebetween;
- a processing gas delivery unit through which said processing gas is delivered into said reaction container;
- a coil wound around said side wall, to which specific high-frequency power is applied;
- and
- a film coating that covers the outer surface of said side wall;
- said film coating is a thin-film constituted of an insulating material with a heat resisting property, which blocks ultraviolet light originating from the plasma generated inside said reaction container.
A plasma generation chamber where plasma is generated by exciting a hydrogen-containing processing gas, comprising:
- a processing gas intake portion via said processing gas is taken in;
- a reaction container having a tubular side wall;
- a processing gas delivery unit through which said processing gas is delivered into said reaction container;
- a coil wound around said side wall, to which specific high-frequency power is applied;
- and
- a film coating that covers the outer surface of said side wall, wherein:
- said film coating is a thin film constituted of an insulating material with a heat resisting property, which blocks ultraviolet light originating from the plasma generated inside said reaction container.
Dependencies are inferred from the claim text.