Silicon multiple solar cell and method for production thereof

A silicon multiple solar cell comprising at least two subcells (1, 2) each having a p-type layer (p1, p2), an intrinsic layer (i1, i2) and a phosphorus-doped n-type layer (n1, n2), the light falling through the p-type layer (p1, p2) into the intrinsic layer (i1, i2) of the particular subcell (1, 2), and the p-type layer (p2) having a first sublayer (p21) at the interface with the n-type layer (n1) of the subcell (1) disposed therebefore, and a second, amorphous sublayer (p22), characterized in that the first sublayer (p21) of the p-type layer (p2) comprises nanocrystalline silicon comprising crystals with a size of 1 to 100 nm and has a layer thickness of at least 2 nm, and the n-type layer (n1) has a smaller layer thickness (Dn2) than the layer thickness (Dp2) of the p-type layer (p2,) in contact therewith, of the subsequent subcell (2).