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US 2009/0015534 A1Published application
Semiconductor device and electronic device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHongyong Zhang
Life of this patent
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Abstract
A channel forming region of a thin-film transistor is covered with an electrode and wiring line that extends from a source line. As a result, the channel forming region is prevented from being illuminated with light coming from above the thin-film transistor, whereby the characteristics of the thin-film transistor can be made stable.
Claims20
An active matrix type liquid crystal display device comprising:
- a thin film transistor over a substrate having an insulating surface, the thin film transistor comprising:
- a channel forming region, a source region and a drain region;
- and
- a gate electrode adjacent to the channel forming region with a gate insulating film interposed therebetween;
- an interlayer insulating layer comprising an organic resin over the thin film transistor;
- a passivation film comprising silicon nitride over the interlayer insulating layer;
- and
- a pixel electrode over the passivation film and electrically connected to one of the source region and the drain region of the thin transistor.
5 more elements
An active matrix type liquid crystal display device comprising:
- a thin film transistor over a substrate having an insulating surface, the thin film transistor comprising:
- a channel forming region, a source region and a drain region;
- and
- a gate electrode adjacent to the channel forming region with a gate insulating film interposed therebetween;
- an interlayer insulating layer comprising an organic resin and having a flat surface over the thin film transistor;
- a passivation film comprising silicon nitride over the interlayer insulating layer;
- and
- a pixel electrode over the passivation film and electrically connected to one of the source region and the drain region of the thin transistor.
5 more elements
An active matrix type liquid crystal display device comprising:
- a thin film transistor over a substrate having an insulating surface, the thin film transistor comprising:
- a channel forming region, a source region and a drain region;
- and
- a gate electrode adjacent to the channel forming region with a gate insulating film interposed therebetween;
- an interlayer insulating layer comprising an organic resin over the thin film transistor;
- a source line electrically connected to one of the source region and the drain region of the thin film transistor;
- a passivation film comprising silicon nitride over the interlayer insulating layer;
- and
- a pixel electrode over the passivation film and electrically connected to the other of the source region and the drain region of the thin transistor,
- wherein the source line is overlapped with the gate electrode of the thin film transistor.
7 more elements
An active matrix type liquid crystal display device comprising:
- a thin film transistor over a substrate having an insulating surface, the thin film transistor comprising:
- a channel forming region, a source region and a drain region;
- and
- a gate electrode adjacent to the channel forming region with a gate insulating film interposed therebetween;
- an interlayer insulating layer comprising an organic resin and having a flat surface over the thin film transistor;
- a source line electrically connected to one of the source region and the drain region of the thin film transistor;
- a passivation film comprising silicon nitride over the interlayer insulating layer;
- and
- a pixel electrode over the passivation film and electrically connected to the other of the source region and the drain region of the thin transistor,
- wherein the source line is overlapped with the gate electrode of the thin film transistor.
7 more elements
Dependencies are inferred from the claim text.