Charge pump drive circuit
AssigneeNEC Electronics Corporation
InventorYuri HONDA
Life of this patent
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Abstract
A charge pump drive circuit includes a first MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and a second MOSFET. The first MOSFET and the second MOSFET are different in channel type and provided to form a complementary inverter circuit. The complementary inverter circuit drives a charge pump circuit based on an input potential inputted to an input terminal. A first gate of the first MOSFET and a second gate of the second MOSFET are connected to the input terminal such that a potential at the first gate is different from a potential at the second gate.
Claims11
A charge pump drive circuit comprising:
- a first MOSFET (Metal Oxide Semiconductor Field Effect Transistor);
- and
- a second MOSFET,
- wherein said first MOSFET and said second MOSFET are different in channel type and provided to form a complementary inverter circuit,
- said complementary inverter circuit drives a charge pump circuit based on an input potential inputted to an input terminal, and
- a first gate of said first MOSFET and a second gate of said second MOSFET are connected to said input terminal such that a potential at said first gate is different from a potential at said second gate.
A semiconductor device comprising:
- a charge pump circuit;
- and
- a charge pump drive circuit,
- wherein said charge pump drive circuit includes:
- a first MOSFET (Metal Oxide Semiconductor Field Effect Transistor);
- and
- a second MOSFET,
- said first MOSFET and said second MOSFET are different in channel type and provided to form a complementary inverter circuit,
- said complementary inverter circuit drives said charge pump circuit based on an input potential inputted to an input terminal, and
- a first gate of said first MOSFET and a second gate of said second MOSFET are connected to said input terminal such that a potential at said first gate is different from a potential at said second gate.
A voltage converting method comprising:
- driving a charge pump circuit based on an input potential inputted to an input terminal,
- wherein a first gate of a first MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and a second gate of a second MOSFET are connected to said input terminal such that a potential at said first gate is different from a potential at said second gate, and
- said first MOSFET and said second MOSFET are different in channel type and provided to form a complementary inverter circuit.
Dependencies are inferred from the claim text.