Semiconductor memory device and method of generating chip enable signal thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsDoo-Gon KIM, Youn-Cheul KIM
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AssigneeSamsung Electronics Co., Ltd.
InventorsDoo-Gon KIM, Youn-Cheul KIM
Estimating the term…
Provided are a semiconductor memory device and a method of generating a chip enable signal thereof. The device includes a plurality of memory chips and an interface chip that are stacked. Each of the memory chips includes a control signal setting unit, which sets input signals applied to first and second input nodes as less significant 2-bit control signals of n-bit control signals, performs a logic AND operation on the less significant 2-bit control signals to generate AND operated signals, performs a logic XOR operation on each of the AND operated signals and each bit signal of more significant n−2-bit input signals applied to third to n-th input nodes to set the n−2-bit control signals, outputs the signal applied to the second input node through a first output node, inverts the signal applied to the first input node to output the inverted signal through a second output node, and outputs the more significant n−2-bit input signals through third through n-th output nodes, respectively. The first through n-th output nodes of one of two adjacent memory chips are respectively connected to the first through n-th input nodes of the other of the two adjacent memory chips.
A semiconductor memory device comprising a plurality of memory chips and an interface chip that are stacked, each memory chip comprising a control signal setting unit, which sets input signals applied to first and second input nodes as less significant 2-bit control signals of n-bit control signals, performs a logic AND operation on the less significant 2-bit control signals to generate AND operated signals, performs a logic XOR operation on each of the AND operated signals and each bit signal of more significant n−2-bit input signals applied to third to n-th input nodes to set the n−2-bit control signals, outputs the signal applied to the second input node through a first output node, inverts the signal applied to the first input node to output the inverted signal through a second output node, and outputs the more significant n−2-bit input signals through third through n-th output nodes, respectively,
A semiconductor memory device comprising a plurality of memory chips and an interface chip that are stacked, each memory chip comprising a control signal setting unit, which generates input signals applied to first through n-th input nodes as n-bit control signals and performs a logic AND operation on the input signals applied to the first through n-th input nodes and less significant bit signals of the respective input signals applied to the first through n-th input nodes and outputs respective sum signals on each of the input signals through second through n-th input nodes and respective bit signals excluding n-th bit signal of respective AND operated signals obtained by performing the logic AND operation to second through n-th output nodes, respectively,
A semiconductor memory device comprising four or fewer memory chips and an interface chip that are stacked, each memory chip comprising an enable signal generation unit, which performs a logic AND operation on input signals applied to first and second input nodes to generate a chip enable signal, outputs the input signal applied to the second input signal through a first output node, and inverts the input signal applied to the first input node to output the inverted signal through a second output node,
A method of generating a chip enable signal of a semiconductor memory device in which a plurality of memory chips and an interface chip are stacked, each memory chip comprising first through n-th input nodes and first through n-th output nodes, and the first through n-th input nodes of one of two adjacent memory chips are respectively connected to the first through n-th output nodes of the other of the two adjacent memory chips, the method comprising:
A method of generating a chip enable signal of a semiconductor memory device in which a plurality of memory chips and an interface chip are stacked, each memory chip comprising first through n-th input nodes and first through n-th output nodes, and the first through n-th input nodes of one of two adjacent memory chips are respectively connected to the first through n-th output nodes of the other of the two adjacent memory chips, the method comprising:
Dependencies are inferred from the claim text.